HS52-A-C Series Current Sensor Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Customized: Customized
• Trademark: TRANSFAR
• Model NO.: HS52
• Origin: China
• HS Code: 9030339000

Product Description

DESCRIPTION:


The primary side and secondary side of this series of current sensors are insulated, used for DC, AC and pulsed current measurement.
 

 

FEATURES:

 

Open loop using the Hall ASIC effect 
The primary side and the secondary side are isolated
Low power consumption
Wide range
No insertion loss
Raw materials recognized according to UL 94-V0
 

 

APPLICATIONS:

Motor Controller
Uninterruptible Power Supplies (UPS) 
Static converters for DC motor drives 
Switched Mode Power Supplies (SMPS) 
Power supplies for welding applications

 

MODEL LIST:
 

 

Product MODEL
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS52-  600A-C	600	±600
HS52-  900A-C	900	±900
HS52-1200A-C	1200	±1200
HS52-1500A-C	1500	±1500

     



HS52-600A-C SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical data
Primary current measurement range	IPN	A	-600		600
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5)x(2.5+GthxIP)			@ VC
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A		3.333
Current consumption	IC	mA		15	20
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	1		100
Power filter capacitor	C1	µF	-	-	-
Performance  data
Gain error	G	%	-1		1
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV	-10		10	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.074		0.074	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV		3		@TA=25@VC=5V after±IP
Nonlinear error	L	% of IPN	-1		1	exclude zero VOE
Response time	tr	µs		5	8	@ di/dt = 100 A/µs
Bandwidth ( -3dB)	BW	kHz		30
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 1MHZ
General  data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-55….+125
Weight	m	g	48

HS52-900A-C SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  data
Primary current measurement range	IPN	A	-900		900
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+GthxIP)			@ VC
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A		2.222
Current consumption	IC	mA		15	20
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	1		100
Power filter capacitor	C1	µF	-	-	-
Performance  data
Gain error	G	%	-1		1
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV	-10		10	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.074		0.074	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV		3		@TA=25@VC=5V after±IP
Nonlinear error	L	% of IPN	-1		1	exclude zero VOE
Response time	tr	µs		5	8	@ di/dt = 100 A/µs
Bandwidth ( -3dB)	BW	kHz		30
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 1MHZ
General  data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-55….+125
Weight	m	g	48

HS52-1200A-C SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  data
Primary current measurement range	IPN	A	-1200		1200
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@ VC
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A		1.666
Current consumption	IC	mA		15	20
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	1		100
Power filter capacitor	C1	µF	-	-	-
Performance  data
Gain error	G	%	-2		2
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV	-10		10	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.074		0.074	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV		3		@TA=25@VC=5V after±IP
Nonlinear error	L	% of IPN	-2		2	exclude zero VOE
Response time	tr	µs		5	8	@ di/dt = 100 A/µs
Bandwidth ( -3dB)	BW	kHz		30
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 1MHZ
General  data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-55….+125
Weight	m	g	48

HS52-1500A-C SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  data
Primary current measurement range	IPN	A	-1500		1500
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@ VC
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A		1.333
Current consumption	IC	mA		15	20
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	1	-	100
Power filter capacitor	C1	µF	-	-	-
Performance  data
Gain error	G	%	-2		2
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV	-10		10	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.074		0.074	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV		3		@TA=25@VC=5V after±IP
Nonlinear error	L	% of IPN	-2		2	exclude zero VOE
Response time	tr	µs		5	8	@ di/dt = 100 A/µs
Bandwidth ( -3dB)	BW	kHz		30
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 1MHZ
General  data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-55….+125
Weight	m	g	48

Note:

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc ;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;

 

1. Incorrect wiring may damage the sensor.

Insulation data:
 

Parameter	Symbol	Unit	Value	Comment
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	2
Impulse withstand voltage 1.2/50uS	UW	KV	-
Shell material	-	-	UL94-V0	PBT+30%GF
Relative tracking index	CTI	-	-
Creepage distance	dCP	mm	-
Electrical clearance	dCI	mm	-

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	7
Continuous output current	Iout	mA	±10
Electrostatic discharge - contact discharge	VESD	KV	2