HS10r-a-P Series Current Sensor/Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Accuracy Grade: 0.1G
• Application: Switching Power Supply
• Model NO.: HS10R
• Customized: Customized
• Transport Package: Carton
• Specification: 38.5*22*24.6cm
• Trademark: TRANSFAR
• Origin: China
• HS Code: 9030339000
• Production Capacity: 100000 Pieces Per Year

Product Description

HS10R-A-P SERIES CURRENT SENSOR/TRANSDUCER


DESCRIPTION:

For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

FEATURES:

 Open loop using the Hall ASIC effect  
  Galvanic separation between the primary and the secondary circuit
 Low power consumption
 Wide range
 No insertion loss
 Raw materials recognized according to UL 94-V0


APPLICATIONS:

  Photovoltaic inverter
  Uninterruptible power supply (UPS)
   Static converter driven by DC motor
  Switching power supply (SMPS)
  Power supplies for welding applications


MODEL LIST:

Product MODEL
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS10R-10A-P	10	±25
HS10R-16A-P	16	±40
HS10R-20A-P	20	±50
HS10R-32A-P	32	±80
HS10R-40A-P	40	±100
HS10R-50A-P	50	±125

HS10R-10A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-10		10
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@ VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		80
Current consumption	IC	mA	-	18	25
Load resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature drift of gain error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	VOE	mV	-5		5	Vout-Vref@Vref=2.5V  Ipn=0
Temperature drift of zero error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic Offset Voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	%of IPN	-0.5		0.5	exclude zero VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

HS10R-16A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-16		16
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@ VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		50
Current consumption	IC	mA	-	18	25
Load Resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature drift of gain error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	Voe	mV	-5		5	Vout-Vref@Vref=2.5V  Ipn=0
Temperature drift of zero error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic offset voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	% of IPN	-0.5		0.5	exclude zero VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

HS10R-20A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-20		20
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@ VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		40
Current consumption	IC	mA	-	18	25
Load Resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature drift of gain Error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	VOE	mV	-5		5	Vout-Vref@Vref=2.5V  Ipn=0
Temperature Drift of Zero Error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic offset voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	% of IPN	-0.5		0.5	exclude zero  VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

HS10R-32A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-32		32
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@ VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		25
Current consumption	IC	mA	-	18	25
Load Resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature drift of gain Error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	VOE	mV	-5		5	Vout-Vref@Vref=2.5V  Ipn=0
Temperature Drift of Zero Error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic offset voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	% of IPN	-0.5		0.5	exclude zero VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

HS10R-40A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-40		40
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@ VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		20
Current consumption	IC	mA	-	18	25
Load Resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature Drift of Gain Error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	VOE	mV	-5		5	Vout-Vref@Vref=2.5V Ipn=0
Temperature drift of zero error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic Offset Voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	% of IPN	-0.5		0.5	exclude zero VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

HS10R-50A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Remarks
Electrical Data
Primary current measurement range	IPN	A	-50		50
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IPn)			@VC
Zero output voltage	VQOV	V	2.495	2.5	2.505	@VC=5 & IPn=0A
Reference voltage	Vref	V	2.48	2.5	2.52
Theoretical gain	Gth	mV/A		16
Current consumption	IC	mA	-	18	25
Load Resistance	RL	kΩ	5	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10
Power filter capacitor	C1	µF	-	-	0.1
Performance Data
Gain error	G	%	-1		1
Temperature Drift of Gain Error	TCG	%	-2.5		2.5	@TA -40ºC~105ºC
Zero offset voltage	VOE	mV	-5		5	Vout-Vref@Vref=2.5V  Ipn=0
Temperature Drift of Zero Error	TCVOE	mV	-12		12	@TA -40ºC~105ºC
Magnetic Offset Voltage	VOM	mV		±2		@TA=25@VC=5V after±IPn
Nonlinear error	L	% of IPN	-0.5		0.5	exclude zero VOE
Response time	tr	µs		3.6	-	@Bstep=400G,CL=1nF
Bandwidth ( -3dB)	BW	kHz		200
Phase shift	∅	degree		-
Output noise	Vno pp	mV		10		@DC to 200KHZ
General Data
Ambient operating temperature	TA	ºC	-40….+105
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 5

Note :

1. Output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;

 

1. Wrong wiring may damage the sensor.

Insulation data:                       
 

Parameter	Symbol	Unit	Value	Remarks
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	4.3
Impulse withstand voltage 1.2/50uS	UW	KV	8
Shell material	-	-	UL94-V0	PA66+30%GF
Relative tracking index	CTI	-	-
Creepage distance	dCP	mm	>8
Electrical clearance	dCI	mm	>8

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	8
Output current (output shorted to ground)	Iout	mA	2.8
Electrostatic discharge - contact discharge	VESD	V	2000