HS08-a-P Series Current Sensor/Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Accuracy Grade: 0.1G
• Application: Switching Power Supply
• Model NO.: HS08
• Customized: Customized
• Transport Package: Carton
• Specification: 38.5*22*24.6cm
• Trademark: TRANSFAR
• Origin: China
• HS Code: 9030339000
• Production Capacity: 100000 Pieces Per Year

Product Description

HS08-A-P SERIES CURRENT SENSOR/TRANSDUCER

DESCRIPTION:

For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.
 

 

FEATURES;

  Closed loop using the Hall effect
    Galvanic separation between the primary and the secondary circuit
  Low power consumption
  Wide range
  No insertion loss
   Raw materials recognized according to UL 94-V0


APPLICATIONS:

  Inverter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives
  Switched Model Power Supplies (SMPS)
  Power supplies for welding applications
  Battery management
 
MODEL LIST:
 

Product MODEL
Model	Rated Input Current IPN (A)	Measuring Range IPM (A)
HS08-  5A-P	5(NP/NS:4/2000)	±15
HS08-10A-P	10(NP/NS:3/3000)	±30
HS08-15A-P	15(NP/NS:2/3000)	±45
HS08-20A-P	20(NP/NS:1/2000)	±60
HS08-25A-P	25(NP/NS:1/2500)	±75
HS08-30A-P	30(NP/NS:1/3000)	±90
HS08-50A-P	50(NP/NS:1/3125)	±150

 

HS08-A-P SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	20+IPX	@IPX=NP/NS
Output voltage ( analog output )	VOUT	mV	±4V±20	@ ± IPN, RL = 10k, TA = 25°C
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	>1000	@500VDC
Internal impedance	ROUT	Ω	100	approximation
Load Resistor ^(2)	RL	KΩ	>10
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.1
Precision	X	%	<±0.5	@ IPN , TA  = 25°C
				( remove zero offset voltage)
Zero offset voltage	VOE	mV	<±40	@TA = 25°C
Magnetic offset voltage	VOM	mV	<±10	@IP=0;
				1 times the rated current impact
Zero offset temperature drift	TCVOE	mV/K	<±0.5	@ HS08-A~P
Output offset temperature drift	TCVOUT	%/K	<±0.01	@% of reading
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Ambient operating temperature	TA	ºC	-40….+85
Ambient storage temperature	TS	ºC	-40….+105
Mass	m	g	20	approximation

Notice:

1. Under the power supply condition of ±12V≤VC≤±15V, the measurement range of the sensor will be reduced;

 

1.  If the customer uses a load resistance of 1 KΩ, the current to be measured needs to be limited to the rated current. If the full-scale current is to be measured, the load resistance should be at least 10 KΩ.

(3) Linearity data does not include zero offset.


Insulation data:                       
 

Parameter	Symbol	Unit	Value	Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	3.0
Impulse withstand voltage 1.2/50uS	UW	KV	-
Shell material	-	-	UL94-V0	PPO
Relative tracking index	CTI	V	-
Creepage distance	dCP	mm	10
electrical clearance	dCI	mm	10

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	±18
Output current (output shorted to ground)	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	V	-