HS44M-A-P Series Current Sensors Transducer

Type: Hall Type
Output Signal Type: Analog Output
Production Process: Integration
Material: Plastic
Customized: Customized
Trademark: TRANSFAR
Samples:
US$ 6/Piece 1 Piece(Min.Order)
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Basic Info.

Model NO.
HS44M
Origin
China
HS Code
9030339000

Product Description

DESCRIPTION:

For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.


 
 
FEATURES:
 
 
Open loop using the Hall effect 
  The primary side and the secondary side are isolated
Low power consumption
Wide range
No insertion loss
  Raw materials recognized according to UL 94-V0
 



APPLICATIONS:
Motor Controller
Uninterruptible Power Supplies (UPS) 
Static converters for DC motor drives
Switched Mode Power Supplies (SMPS) 
Power supplies for welding applications

 


MODEL LIST :




 
 
Product model
Model Rated input current IPN (A) Measuring range IPM (A)
HS44M-700A-P 700 ±700
HS44M-800A-P 800 ±800
HS44M-900A-P 900 ±900


     
HS44M - 700A - P SPECIFICATION
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary current measurement range IPN A -700   700  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC
Zero output voltage VQOV V 2.475 2.5 2.525 @VC=5 & IP=0A
Reference voltage Gth mV/A   2.86    
Theoretical gain IC mA 3 5 8  
Current consumption RL 5 - unlimited @VOUT to GND
Load Resistance C2 nF - - -  
Load capacitance C1 µF - - -  
Performance Data
Gain error G % -2 ±1 2  
Temperature drift of gain error TCG %/ºC -0.06   0.06 @TA -40ºC~125ºC
Zero offset voltage VOE mV   ±5 ±20 @VC=5V &IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV   ±2 ±5 @TA=25@VC=5V after±IP
Nonlinear error L % of IPN -1   1 exclude zero VOE
Response time tr µs   8 10  
Bandwidth ( -3dB) BW kHz   30    
Phase shift degree   3.6 5 @DC to 1KHZ
Output noise Vno pp mV   10   @DC to 1MHZ
General Data
Working ambient temperature TA ºC -40….+125  
Storage ambient temperature TS ºC -55….+150  
Weight m g approx 20  




HS44M - 800A - P SPECIFICATION
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary current measurement range IPN A -800   800  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC
Zero output voltage VQOV V 2.475 2.5 2.525 @VC=5 & IP=0A
Theoretical gain Gth mV/A   2.5    
Current consumption IC mA 3 5 8  
Load Resistance RL 5 - unlimited @VOUT to GND
Load capacitance C2 nF - - -  
Power filter capacitor  C1 µF - - -  
Performance Data
Gain error G % -2 ±1 2  
Temperature drift of gain error TCG %/ºC -0.06   0.06 @TA -40ºC~125ºC
Zero offset voltage VOE mV   ±5 ±20 @VC=5V &IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV   ±2 ±5 @TA=25@VC=5V after±IP
Nonlinear error L % of IPN -1   1 exclude zero VOE
Response time tr µs   8 10  
Bandwidth ( -3dB) BW kHz   30    
Phase shift degree   3.6 5 @DC to 1KHZ
Output noise Vno pp mV   10   @DC to 1MHZ
General Data
Working ambient temperature TA ºC -40….+125  
Storage ambient temperature TS ºC -55….+150  
Weight m g approx 20  


HS44M - 900A - P SPECIFICATION
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary current measurement range IPN A -900   900  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC
Zero output voltage VQOV V 2.475 2.5 2.525 @VC=5 & IP=0A
Theoretical gain Gth mV/A   2.5    
Current consumption IC mA 3 5 8  
Load Resistance RL 5 - unlimited @VOUT to GND
Load capacitance C2 nF - - -  
Power filter capacitor  C1 µF - - -  
Performance Data
Gain error G % -2 ±1 2  
Temperature drift of gain error TCG %/ºC -0.06   0.06 @TA -40ºC~125ºC
Zero offset voltage VOE mV   ±5 ±20 @VC=5V &IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV   ±2 ±5 @TA=25@VC=5V after±IP
Nonlinear error L % of IPN -1   1 exclude zero VOE
Response time tr µs   8 10  
Bandwidth ( -3dB) BW kHz   30    
Phase shift degree   3.6 5 @DC to 1KHZ
Output noise Vno pp mV   10   @DC to 1MHZ
General Data
Working ambient temperature TA ºC -40….+125  
Storage ambient temperature TS ºC -55….+150  
Weight m g approx 20  

Note :
  1. The output voltage Uout , the offset voltage UQOV , and the sensitivity Gth are completely proportional to the power supply Vc;
 
  1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;
 
  1. Wrong wiring may damage the sensor ;

Insulation data:
 
Parameter Symbol Unit Value Comment
AC isolation withstand voltage test RMS @ 50Hz, 1min UD KV 1.2  
Impulse withstand voltage 1.2/50uS UW KV -  
Shell material - - UL94-V0 PA66+30%GF
Relative tracking index CTI - -  
Creepage distance dCP mm 2.6  
electrical clearance dCI mm 2.6  


Maximum limit:
 
Parameter Symbol Unit Value
Supply voltage VC V 7
Output current (output shorted to ground) Iout mA 20
Electrostatic discharge - contact discharge VESD V 8000

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Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
47686000 RMB
Plant Area
>2000 square meters