• CS04r-a-Np Series Current Sensor/Transducer
  • CS04r-a-Np Series Current Sensor/Transducer
  • CS04r-a-Np Series Current Sensor/Transducer
  • CS04r-a-Np Series Current Sensor/Transducer
  • CS04r-a-Np Series Current Sensor/Transducer

CS04r-a-Np Series Current Sensor/Transducer

Type: Fluxgate Type
Output Signal Type: Analog Output
Production Process: Integration
Material: Plastic
Accuracy Grade: 0.1G
Application: Switching Power Supply
Samples:
US$ 10/Piece 1 Piece(Min.Order)
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Basic Info.

Model NO.
CS04R-A-NP
Customized
Customized
Transport Package
Carton
Specification
38.5*22*24.6cm
Trademark
TRANSFAR
Origin
China
HS Code
9030339000
Production Capacity
100000 Pieces Per Year

Product Description

      
CS04R-A-NP SERIES CURRENT SENSOR/TRANSDUCER

DESCRIPTION:

For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

FAEAUTRES:


Closed loop current sensor using the Fluxgate technology
Galvanic separation between the primary and the secondary circuit
Low power consumption
Wide range
No insertion loss
Raw materials recognized according to UL 94-V0


APPLICATIONS:

AC variable speed and servo motor drives
Uninterruptible Power supplies (UPS)
Static converters for DC motor drives
Switched Mode Power Supplies (SMPS)
Solar Inverter Power Supplies

 

MODEL LIST:

 
Product MODEL
Model Rated input current IPN (A) Measuring range IPM (A)
CS04-  6A-NP   6   ±20
CS04-15A-NP 15   ±51
CS04-25A-NP 25   ±85
CS04-50A-NP 50 ±150


CS04R-6A-NP SPECIFICATION
 
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary side rated current IPN A -6 - 6  
Primary current measurement range IPM A -20 - 20  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC=5V
Reference output voltage VOUT V 2.495 2.5 2.505 @VC=5V & IP=0A
Zero output voltage Gth mV/A - 104.2 -  
Theoretical gain IC mA 15 - 19 @ IP=IPN
Current consumption RL 10 - unlimited @VOUT to GND
Load resistance C2 nF - - 0.1  
Load capacitance C1 µF - - 0.1  
Power filter capacitor IPN A -6 - 6  
Performance Data
Gain error G % -0.8 - 0.8 @TA=25@VC=5V
Temperature drift of gain error TCG PPM/K - - ±40 @TA -40ºC~105ºC
Zero point error VOE mV -5.3 - 5.3 @VC=5V &IP=0A VOUT-VREF
Temperature drift of zero error TCVOE PPM/K - ±6 ±14 @TA -40ºC~105ºC
Magnetic offset voltage VOM mV -10.42 - 10.42 @TA=25@VC=5V 10*IPN
Nonlinear error L % of IPN -0.1 - 0.1 exclude zero VOE
Response time tr µs - - 0.3 @ di/dt =18A/µs
Bandwidth ( -1 dB ) BW kHz 200 - -  
Bandwidth ( -3dB) BW kHz 300 - -  
Phase shift degree - - -  
Output noise Vno pp mV - - -  
General Data
Ambient operating temperature TA ºC -40….+105  
Ambient storage temperature TS ºC -55….+105  
Mass m g 9  



CS04R -15A-NP SPECIFICATION
 
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary side rated current IPN A -15 - 15  
Primary current measurement range IPM A -51 - 51  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC=5V
Reference output voltage VOUT V 2.495 2.5 2.505 @ VC=5V & IP=0A
Zero output voltage Gth mV/A - 41.67 -  
Theoretical gain IC mA 15 - 24 @ IP=IPN
Current consumption RL 10 - unlimited @ VOUT to GND
Load Resistance C2 nF - - 0.1  
Load capacitance C1 µF - - 0.1  
Power filter capacitor IPN A -15 - 15  
Performance Data
Gain error G % -0.8 - 0.8 @TA=25@VC=5V
Temperature Drift of Gain error TCG PPM/K - - ±40 @TA -40ºC~105ºC
Zero point error VOE mV -2.21 - 2.21 @VC=5V &IP=0A VOUT-VREF
Temperature Drift of Zero Error TCVOE PPM/K - ±2.3 ±6 @TA -40ºC~105ºC
Magnetic Offset Voltage VOM mV -4.167 - 4.167 @TA=25@VC=5V 10*IPN
Nonlinear error L % of IPN -0.1 - 0.1 exclude zero VOE
Response time tr µs - - 0.3 @ di/dt =44A/µs
Bandwidth ( -1 dB ) BW kHz 200 - -  
Bandwidth ( -3dB) BW kHz 300 - -  
Phase shift degree - - -  
Output noise Vno pp mV - - -  
General Data
Ambient operating temperature TA ºC -40….+105  
Ambient storage temperature TS ºC -55….+105  
Mass m g 9  



CS04R-25A-NP SPECIFICATION
 
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary side rated current IPN A -25 - 25  
Primary current measurement range IPM A -85 - 85  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC=5V
Reference output voltage VOUT V 2.495 2.5 2.505 @ VC=5V & IP=0A
Zero output voltage Gth mV/A - 25 -  
Theoretical gain IC mA 15 - 39 @ IP=IPN
Current consumption RL 10 - unlimited @VOUT to GND
Load Resistance C2 nF - - 0.1  
Load capacitance C1 µF - - 0.1  
Power filter capacitor IPN A -25 - 25  
Performance Data
Gain error G % -0.8 - 0.8 @TA=25@VC=5V
Temperature Drift of Gain error TCG PPM/K - - ±40 @TA -40ºC~105ºC
Zero point error VOE mV -1.35 - 1.35 @VC=5V &IP=0A VOUT-VREF
Temperature Drift of Zero Error TCVOE PPM/K - ±1.4 ±4 @TA -40ºC~105ºC
Magnetic Offset Voltage VOM mV -2.5 - 2.5 @TA=25@VC=5V 10*IPN
Nonlinear error L % of IPN -0.1 - 0.1 exclude zero VOE
Response time tr µs - - 0.3 @ di/dt =68A/µs
Bandwidth ( -1 dB ) BW kHz 200 - -  
Bandwidth ( -3dB) BW kHz 300 - -  
Phase shift degree - - -  
Output noise Vno pp mV - - -  
General Data
Ambient operating temperature TA ºC -40….+105  
Ambient storage temperature TS ºC -55….+105  
Mass m g 9  



CS04R - 50A-NP SPECIFICATION
 
Parameter Symbol Unit Min Typ Max Comment
Electrical Data
Primary side rated current IPN A -50 - 50  
Primary current measurement range IPM A -150 - 150  
Supply voltage VC V 4.75 5.0 5.25  
Output voltage VOUT V VOUT=(VC/5) x (2.5+Gth x IP) @ VC=5V
Reference output voltage  VOUT V 2.495 2.5 2.505 @ VC=5V & IP=0A
Zero output voltage Gth mV/A - 12.5 -  
Theoretical gain IC mA 15 - 65 @ IP=IPN
Current consumption RL 10 - unlimited @VOUT to GND
Load Resistance C2 nF - - 0.1  
Load capacitance C1 µF - - 0.1  
Power filter capacitor IPN A -50 - 50  
Performance Data
Gain error G % -0.8 - 0.8 @TA=25@VC=5V
Temperature Drift of Gain error TCG PPM/K - - ±40 @TA -40ºC~105ºC
Zero point error VOE mV -0.725 - 0.725 @VC=5V &IP=0A VOUT-VREF
Temperature Drift of Zero Error TCVOE PPM/K - ±0.7 ±3 @TA -40ºC~105ºC
Magnetic Offset Voltage VOM mV -1.25 - 1.25 @TA=25@VC=5V 10*IPN
Nonlinear error L % of IPN -0.1 - 0.1 exclude zero VOE
Response time tr µs - - 0.3 @ di/dt =100A/µs
Bandwidth ( -1 dB ) BW kHz 200 - -  
Bandwidth ( -3dB) BW kHz 300 - -  
Phase shift degree - - -  
Output noise Vno pp mV - - -  
General Data
Ambient operating temperature TA ºC -40….+105  
Ambient storage temperature TS ºC -55….+105  
Mass m g 9  


Note :
  1. output voltage Uout , Offset voltage UQOV , and the sensitivity Gth are completely proportional to the power supply Vc;
 
  1. The frequency of the current to be measured needs to be limited within the frequency band of the current sensor, otherwise the core and chip will be overheated;
 
  1. Wrong wiring may damage the current sensor ;

Insulation data:                       

 
Parameter Symbol Unit  Value Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min UD KV 4.1  
Impulse withstand voltage 1.2/50uS UW KV 7.5  
Shell material - - UL94-V0 PPO
Relative tracking index CTI V 600  
Creepage distance dCP mm 7.5  
Electrical clearance dCI mm 7.5  


Maximum limit:

 
Parameter Symbol Unit Value
Supply voltage VC V 7
Continuous output current Iout mA -
Electrostatic discharge - contact discharge VESD KV 4

CS04r-a-Np Series Current Sensor/Transducer
afety
This device must be used according to  IEC610101.

This device  must be used in electric/electronic equipment with respect to applicable standards and safety requirements in accordance with the operating instructions.


 
Caution, risk of electrical shock.

When operating the device, certain parts can carry hazardous voltage (eg. primary busbar, power supply). Ignoring this warning can lead to injury and/or cause serious damage.
This is a builtin device, whose conducting parts must be inaccessible after installation.
A protective housing or additional shield can be used.
Main supply must be able to be disconnected.




 

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Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
47686000 RMB
Plant Area
>2000 square meters