Type: | Hall Type |
---|---|
Output Signal Type: | Analog Output |
Production Process: | Integration |
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Model | Rated input current IPN (A) | Measuring range IPM (A) |
HB3T-4000A-E4 | 4000 | ±4000 |
Parameter |
Symbol |
Unit |
Min. |
Typ. |
Max. |
Remarks |
Electrical Data |
||||||
Primary rated current | IPN | A | 4000 | |||
Primary current measure range | IPM | A | -4000 | 4000 | ||
Supply voltage | VC | V | ±12 | ±15 | ||
Output voltage | VOUT | V | 4 | @ ± IPN, RL = 10 k, TA = 25°C | ||
Current consumption | IC | mA | -25 | 25 | ||
Overload capacity | ICC | A rms | 5* IPN | |||
Insulation resistance | RIS | MΩ | 1000 | @ 500 VDC | ||
Internal impedance | ROUT | Ω | 100 | |||
Load Resistor | RL | KΩ | 10 | |||
Performance Data | ||||||
Linearity | εL | %of IPN | -1 | 1 | ||
Precision | X | % | -1 | 1 | @ IPN, TA = 25°C (remove zero offset voltage) | |
Zero offset voltage | VOE | mV | -10 | 10 | @TA = 25°C | |
Zero offset voltage | VOM | mV | -10 | 10 | @ IP= 0;1 time the rated current impact | |
Zero offset temperature drift | TCVOE | mV/ºC | -0.24 | 0.24 | ||
Output offset temperature drift | TCVOUT | ppm/ºC | 500 | @% of reading | ||
Response time | tr | µS | 10 | @ 90% of IPN step response | ||
Current follows di/dt | di/dt | A/µS | 50 | |||
Bandwidth | BW | kHz | 30 | @-3dB | ||
General Data | ||||||
Ambient operating temperature | TA | ºC | -40….+85 | |||
Ambient storage temperature | TS | ºC | -40….+105 | |||
Mass | m | g | 600 |
Parameter | Symbol | Unit | Value | Remark |
AC isolation withstand voltage test RMS @ 50Hz, 1min | UD | KV | 5 | |
Impulse withstand voltage 1.2/50uS | UW | KV | 12 | |
Shell material | - | - | UL94-V0 | PET |
Relative tracking index | CTI | PLC | 3 | |
Creepage distance | dCP | mm | 43.1 | |
Electrical clearance | dCI | mm | 23.5 |
Parameter | Symbol | Unit | Value |
Supply voltage | VC | V | ±18 |
Output current (output shorted to ground) | Iout | mA | - |
Electrostatic discharge-contact discharge | VESD | V | - |