HS11c-Ap Series Current Sensor/Transducer for AC Frequency Converter,UPS,Static Converters for DC Motor Drives,SMPS,Electric Vehicles,Communication Power Suppli

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Model NO.: HS11
• Material: Plastic
• Accuracy Grade: 0.1G
• Application: Switching Power Supply
• Customized: Customized
• Transport Package: Carton
• Specification: 38.5*22*24.6cm
• Trademark: TRANSFAR
• Origin: China
• HS Code: 9030339000
• Production Capacity: 100000 Pieces Per Year

Product Description

HS11C-AP SERIES CURRENT SENSOR/TRANSDUCER

DESCRIPTION:

For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.
 

 

FEATURES:
  Easy to install
  No insertion loss
  Strong anti-interference ability
  Compact size

APPLICATIONS:

  AC frequency converter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives
  Switched Mode Power Supplies (SMPS)
  Electric Vehicles
  Communication power supplies
 

MODEL LIST:
 

 

Product MODEL
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS11C-  50A-P	50	±50
HS11C-100A-P	100	±100
HS11C-150A-P	150	±150
HS11C-200A-P	200	±200
HS11C-300A-P	300	±300
HS11C-400A-P	400	±400
HS11C-500A-P	500	±500
HS11C-600A-P	600	±600
HS11C-700A-P	700	±700
HS11C-800A-P	800	±800
HS11C-900A-P	900	±900

HS11C-50A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-50		50
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		40
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows d i /d t	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-100A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-100		100
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		20
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-150A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-150		150
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		13.333
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-200A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-200		200
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		10
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-300A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-300		300
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		6.666
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C- 400A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-400		400
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		5
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-500A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-500		500
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		4
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-600A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-600		600
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		3.333
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-700A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-700		700
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.857
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-800A - P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-800		800
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.5
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-900A - P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-900		900
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.222
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

Note :

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;

 

1. Incorrect wiring may damage the sensor ;

Insulation data:                       
 

Parameter	Symbol	Unit	Value	Comment
AC isolation withstand voltage test RMS @ 50Hz, 1 Min	UD	KV	3
Impulse withstand voltage 1.2/50uS	UW	KV	-
Shell material	-	-	UL94-V0	PBT+30%GF
Relative tracking index	CTI	-	-
Creepage distance	dCP	mm	-
electrical clearance	dCI	mm	-

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	6
Output current (output shorted to ground)	Iout	mA	10
Electrostatic discharge - contact discharge	VESD	V	4000

Beijing TransFar Electronics Group Co., Ltd is a national high-tech enterprise specializing in new energy precision electric quantity sensor, new energy reactor and special transformer and AC/DC, DC/DC module power supply, various kinds of small precision electromagnetic devices.

Headquartered in the Zhuangguancun IT Park, Chaoyang, Beijing, the company has been devoted to designing, manufacturing, and marketing as a whole and owns the brands of "BingZi" and "TransFar" , exports worldwide.

The company owns a production base in Wuyi High-tech Industrial Zone, Nanping City, Fujian Province, covering over an area of 80 mu(5000m²)5, construction area of 40,000 m² .  

The company is a council member of China Society of Power Supply, a standing council member of Beijing Power Supply Industry Association, a member of China Electronic Quality Management Association, a council member of trolley car industry Alliance, a certified ISO9001 quality system company, a customer satisfaction company and a customer satisfaction product company in China's electronic industry.

After decades of development,our company gathered a team of high level professionals. All types of products are able to achieve targeted professional design and high-quality manufacturing,with featured of good constructs, reasonable configuration, high Hi-Pot, good ability of heat dissipation and strong capacity of adapting ambient conditions, are widely used in the complex environment of different industries, such as electric vehicle, photovoltaic power generation,wind power generation, electrical intelligence, railway systems, industrial control systems, electrical-electronic devices, smart instruments and apparatus and general electrical equipment.

The product design is market-oriented. With continuous innovation, we focus on customers requirement and strive to create value for customers. Together with our competitors, we will make contribution to the prosperity and development of electronic components market and electrical-electronic industry.

Vision
To make the combination of electricity and magnetism more perfect.
We are committed to becoming a respected world class enterprise in the field of electromagnetic technology.

Company Tenet
Create the first class products known by the world and become outstanding.

Mission
To make automation more energy-saving, safer and more efficient.

Core Values
Profession, concentration; diligence, pragmatism; quality, safety; mutual-win growth.

Company Culture
"Devotion and Practicability", "Equality, Respect and Teamwork"

Company Goal
Realize the goal of markets-leading and profit-increasing basing upon innovative designing, unique business philosophy and effective management, insisting on innovation.

Quality Guideline
We provide excellent products to satisfy our clients' requirements, achieve the aims of market leading & profit increasing, and realize the company tenet of "Create the first class products known by the world and become outstanding.