DRT Series IGBT Drive Transformer

• Application: Power, Electronic, Instrument
• Phase: Single
• Core: Amorphous Alloy Transformer
• Cooling Method: Dry-type Transformer
• Winding Type: Multi-winding Transformer
• Certification: ISO9001
• Model NO.: DRT Series
• Usage: Single-phase Transformer, Combined Transformer
• Frequency Characteristics: Intermediate Frequency
• Shape of Core: OD
• Brand: Bingzi
• Transport Package: Carton
• Specification: 38.5*22*22cm
• Trademark: Bingzi
• Origin: China
• HS Code: 8504319000

Product Description

The DRT Series IGBT drive transformer is the latest product developed by our company for driving IGBTs and MOSFETs. It uses new materials as the magnetic core and can meet multiple application requirements.
1. Features:
Low coupling capacitance makes it have high anti-interference ability;
Small leakage inductance ensures better output pulse waveform;
No switching delay, high instantaneous transmission power;
High electric strength, safe and reliable;
Fully enclosed, good mechanical and environmental resistance;
Small size, compact structure, beautiful appearance, pin-hole installation, easy to use.
2. Ambient Conditions:
 Ambient temperature: -40ºC ~+85ºC;
 Relative humidity: ≤ 90% at 40 ºC;
 Atmospheric pressure: 860~1060mbar (about 650~800mmHg).
3. Insulation Rating: Class B (130 ºC )
4. Safety Features:
Insulation resistance: >1000MΩ in normal conditions;
Fire retardancy: In conformity with UL94-V0.
5. Comparison table of typical characteristics of various models of DRT Series drive transformers:

SN		Model		Ratio (u)		∫udt (μVs )		Withstand Voltage VP (kV)		Dimensions Tolerance ±0.3 (mm) ^3		Weight(g)
1		DRT801/101A		1:1		280		3.1		16.6×12.5×13.5		4.9
2		DRT801/201A		2:1		280		3.1		16.6×12.5×13.5		4.6
3		DRT801/301A		3:1		280		3.1		16.6×12.5×13.5		4.8
4		DRT801/111B		1:1:1		280		3.1		16.6×12.5×13.5		5.0
5		DRT801/211B		2:1:1		280		3.1		16.6×12.5×13.5		4.6
6		DRT801/311B		3:1:1		280		3.1		16.6×12.5×13.5		4.6
7		DRT802/101A		1:1		310		3.1		20.2×20×14.5		7.8
8		DRT802/201A		2:1		310		3.1		20.2×20×14.5		7.5
9		DRT802/301A		3:1		310		3.1		20.2×20×14.5		8
10		DRT802/111B		1:1:1		310		3.1		20.2×20×14.5		7.6
11		DRT802/211B		2:1:1		310		3.1		20.2×20×14.5		7.5
12		DRT802/311B		3:1:1		310		3.1		20.2×20×14.5		7.3
SN	Model		Ratio (u)		∫udt (μVs )		Withstand Voltage VP (kV)		Dimensions Tolerance ±0.3 (mm) ^3		Weight(g)
13	DRT803/101A		1:1		1000		6		30.14×27.94×25		36.5
14	DRT803/201A		2:1		1000		6		30.14×27.94×25		34.3
15	DRT803/301A		3:1		1000		6		30.14×27.94×25		35
16	DRT803/111B		1:1:1		1000		6		30.14×27.94×25		35
17	DRT803/211B		2:1:1		1000		6		30.14×27.94×25		34.3
18	DRT803/311B		3:1:1		1000		6		30.14×27.94×25		34.8
19	DRT804/101A		1:1		480		4.5		23×23×22		17.8
20	DRT804/201A		2:1		480		4.5		23×23×22		17.8
21	DRT804/301A		3:1		480		4.5		23×23×22		17.3
22	DRT804/111B		1:1:1		480		4.5		23×23×22		18.1
23	DRT804/211B		2:1:1		480		4.5		23×23×22		18.3
24	DRT804/311B		3:1:1		480		4.5		23×23×22		18.5
25	DRT805/101A		1:1		1000		4.5		27.6×25.1×20		23.5
26	DRT805/201A		2:1		1000		4.5		27.6×25.1×20		23.5
27	DRT805/301A		3:1		1000		4.5		27.6×25.1×20		23.8
28	DRT805/111B		1:1:1		1000		4.5		27.6×25.1×20		24
29	DRT805/211B		2:1:1		1000		4.5		27.6×25.1×20		23.3
30	DRT805/311B		3:1:1		1000		4.5		27.6×25.1×20		23.5
31	DRT806/101A		1:1		40		3.1		14×9.5×15		3.0
32	DRT806/201A		2:1		40		3.1		14×9.5×15		3.8
33	DRT806/301A		3:1		40		3.1		14×9.5×15		3.8
34	DRT807/101A		1:1		110		3.1		14×13.7×12		3.9
35	DRT807/201A		2:1		110		3.1		14×13.7×12		3.8
36	DRT807/301A		3:1		110		3.1		14×13.7×12		2.8
37	DRT807/111B		1:1:1		110		2.5		14×13.7×12		3.9
38	DRT807/211B		2:1:1		110		2.5		14×13.7×12		3.8
39	DRT807/311B		3:1:1		110		2.5		14×13.7×12		3.8
40	DRT808/101A		1:1		150		3.1		16.6×14.8×14.3		3.8
41	DRT808/201A		2:1		150		3.1		16.6×14.8×14.3		4.1
42	DRT808/301A		3:1		150		3.1		16.6×14.8×14.3		4.3
43	DRT808/111B		1:1:1		150		2.5		16.6×14.8×14.3		5.8
44	DRT808/211B		2:1:1		150		2.5		16.6×14.8×14.3		5.9
45	DRT808/311B		3:1:1		150		2.5		16.6×14.8×14.3		6
46	DRT811/101A		1:1		80		4.5		22.5 × 22.5 × 16		7.5
47	DRT811/201A		2:1		150		4.5		22.5 × 22.5 × 16		6.8
48	DRT811/301A		3:1		240		4.5		22.5 × 22.5 × 16		6.0
49	DRT811/111B		1:1:1		90		4.5		22.5 × 22.5 × 16		7.0
50	DRT811/211B		2:1:1		150		4.5		22.5 × 22.5 × 16		6.5
51	DRT811/311B		3:1:1		240		4.5		22.5 × 22.5 × 16		6.2
52	DRT8 13-101A		1:1		35		2		15×12.5×8		2.9
53	DRT8 13-201A		2:1		70		2		15×12.5×8		2.9
54	DRT8 13-301A		3:1		110		2		15×12.5×8		2.9

Note:
The parameters given in the above table are typical values measured at room temperature.
The meaning of each parameter:
u- Transformation ratio = ::
V_P - the effective value of the dielectric strength test voltage applied between each winding, and the duration is 60s
∫udt- Rated volt-microsecond product ≈V₁ ·t_n (its value basically remains unchanged within a certain Frequency)
L_P -Coil primary inductance f=1000Hz V=0.3V
L_S -Leakage inductance (measured after the secondary winding is short-circuited) f=1000Hz V=1V
C_K -Distributed capacitance f=1000Hz V=1V

6. Selection Guide:
First according to the operating voltage V of the system. ( effective value ) to determine the required dielectric strength Vp, which can be selected according to the recommendation in Table 1:
    Table 1:

Operating Voltage Vo	220V	380V	500V	800V
Dielectric strength Vp	1.9kV	3.1kV	4.5kV	6kV

Select the transformation ratio according to the power supply voltage of the control stage and the driving voltage required by the IGBT.
For example: if the primary pulse amplitude is 15V, in order to drive the IGBT reliably, it is necessary to select a driving transformer with a transformation ratio of 1:1, such as DRT801/101A, DRT801/111B or DRT802/101A. If the primary pulse amplitude is 24-30V, in order to drive the IGBT reliably, it is necessary to select a driving transformer with a transformation ratio of 2:1, such as DRT801/201A, DRT801/211B or DRT802/201A.
According to the volt-microsecond product (∫udt) and the frequency of the driving pulse (f p), the type selection is based on the principle that the volt-microsecond product of the known driving pulse should be less than or equal to the rated volt-microsecond product of the DRT drive transformer within the Frequency.
For example: if the frequency of the modulating pulse is 20k Hz, the pulse amplitude is 15V, and the pulse width is 20μs, then its volt-microsecond product ∫udt=15×20=300 μVs, according to the known volt-microsecond product of the driving pulse The principle selection should be less than or equal to the rated volt-microsecond product of the DRT drive transformer in the Frequency, and the DRT802 Series products can be selected. If the frequency of the modulated pulse is 50kHz, the pulse amplitude is 24V, and the pulse width is 10μs, then its volt-microsecond product ∫udt=24×10=240μVs, according to the known driving pulse, the volt-microsecond product should be less than or equal to this frequency The principle selection of the rated volt-microsecond product of the DRT drive transformer within the range, the DRT801 series products can be selected.

7. Usage guide:
Typical application circuit:



Note:
i. R₁ and D₁ mainly play the role of freewheeling. D₁ can generally choose 1N4007, R₁ can choose 1kΩ~2 kΩ;
. D_2, D_3, R_2, and R₃ are mainly used for shaping and preventing IGBT gate from opening and providing a discharge circuit. D₂ and D₃ can choose speed-up diodes to increase the switching speed of IGBT, and R ₂ and R₃ can choose dozens of ohms to hundreds of ohms.
. D₄ and D₅ are mainly used to limit the voltage applied to the IGBT (ge) terminal to avoid breakdown of the gate due to excessive grid-to-emitter voltage.
. The operating frequency of the driving transformer can be between a few kHz and tens of kHz.

8. The meaning of each parameter of DRT series IGBT drive transformer and outline drawing, installation dimension, coil diagram and main technical parameters (typical values)
The meaning of each parameter:
u- transformation ratio = : : .
V_P - the effective value of the dielectric strength test voltage applied between each winding, and the duration is 60s.
∫udt- Rated volt-microsecond product ≈V₁ ·t_n (the value basically does not change within a certain Frequency).
V₁ -input pulse amplitude (primary pulse voltage).
t_n -- Drive the rated transmission pulse width of the transformer under the corresponding V₁ and f_P.
V₂ - output pulse amplitude (secondary pulse amplitude).
R_L -IGBT module or MOSFET control stage equivalent resistance.
L_P -coil primary inductance f=1000Hz V=0.3V
L_S -Leakage inductance (measured after the secondary winding is short-circuited) f=1000Hz V=1V
C_K -distributed capacitance f=1000Hz V=1V