HS20-a-C Current Transducer/Sensor for Inverter, UPS, Static Converters for DC Motor Drives, SMPS, Battery Management

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Model NO.: HS19
• Material: Plastic
• Accuracy Grade: 0.1G
• Application: Switching Power Supply
• Customized: Customized
• Transport Package: Carton
• Specification: 38.5*22*24.6cm
• Trademark: TRANSFAR
• Origin: China
• HS Code: 9030339000
• Production Capacity: 100000 Pieces Per Year

Product Description

HS20-A-C Current Transducer/Sensor

DESCRIPTION:
For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

FEATURES:

  Closed loop using the Hall effect
   The primary side and the secondary side are isolated
  Low power consumption
  Wide range
  No insertion loss
  Raw materials recognized according to UL 94-V0


APPLICATIONS:

  Inverter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives  
  Switched Mode Power Supplies (SMPS)
  Power supplies for welding applications
  Battery management
 

MODEL LIST:

Product model
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS20-  25A-C	25	0~   ± 50
HS20-  50A-C	50	0~ ± 100
HS20-100A-C	100	0~ ± 200
HS20-200A-C	200	0 ~ ± 400
HS20-300A-C	300	0 ~ ± 600

HS20-25A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	25
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2000	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~500
Performance Data
Linearity ^(3)(0…±IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP= 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-50A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	50
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2000	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~245
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-100A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	50
Overcurrent capability (1ms)	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~203
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA = 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-200A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	100
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~75
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA = 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-300A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	100
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~60
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

Notice:
(1) Under the power supply condition of ±12V≤VC≤±15V, the measurement range of the sensor will be reduced;

(2) If the customer uses the rated load resistance, the current to be measured needs to be limited to the rated current. If the full-scale current is to be measured, the load resistance should be smaller than the rated resistance .

(3) Linearity data does not include zero offset.


Insulation data:                       
 

Parameter	Symbol	Unit	Value	Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	3
Impulse withstand voltage 1.2/50uS	UW	KV	6
Shell material	-	-	UL94-V0	PPO
Relative tracking index	CTI	PLC	275
Creepage distance	dCP	mm	7
Electrical clearance	dCI	mm	6

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	±18
Output current (output shorted to ground)	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	V	-

Beijing TransFar Electronics Group Co., Ltd is a national high-tech enterprise specializing in new energy precision electric quantity sensor, new energy reactor and special transformer and AC/DC, DC/DC module power supply, various kinds of small precision electromagnetic devices.

Headquartered in the Zhuangguancun IT Park, Chaoyang, Beijing, the company has been devoted to designing, manufacturing, and marketing as a whole and owns the brands of "BingZi" and "TransFar" , exports worldwide.

The company owns a production base in Wuyi High-tech Industrial Zone, Nanping City, Fujian Province, covering over an area of 80 mu(5000m²)5, construction area of 40,000 m² .  

The company is a council member of China Society of Power Supply, a standing council member of Beijing Power Supply Industry Association, a member of China Electronic Quality Management Association, a council member of trolley car industry Alliance, a certified ISO9001 quality system company, a customer satisfaction company and a customer satisfaction product company in China's electronic industry.

After decades of development,our company gathered a team of high level professionals. All types of products are able to achieve targeted professional design and high-quality manufacturing,with featured of good constructs, reasonable configuration, high Hi-Pot, good ability of heat dissipation and strong capacity of adapting ambient conditions, are widely used in the complex environment of different industries, such as electric vehicle, photovoltaic power generation,wind power generation, electrical intelligence, railway systems, industrial control systems, electrical-electronic devices, smart instruments and apparatus and general electrical equipment.

The product design is market-oriented. With continuous innovation, we focus on customers requirement and strive to create value for customers. Together with our competitors, we will make contribution to the prosperity and development of electronic components market and electrical-electronic industry.

Vision
To make the combination of electricity and magnetism more perfect.
We are committed to becoming a respected world class enterprise in the field of electromagnetic technology.

Company Tenet
Create the first class products known by the world and become outstanding.

Mission
To make automation more energy-saving, safer and more efficient.

Core Values
Profession, concentration; diligence, pragmatism; quality, safety; mutual-win growth.

Company Culture
"Devotion and Practicability", "Equality, Respect and Teamwork"

Company Goal
Realize the goal of markets-leading and profit-increasing basing upon innovative designing, unique business philosophy and effective management, insisting on innovation.

Quality Guideline
We provide excellent products to satisfy our clients' requirements, achieve the aims of market leading & profit increasing, and realize the company tenet of "Create the first class products known by the world and become outstanding.