HS51-A-P Series Current Sensor Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Customized: Customized
• Trademark: TRANSFAR
• Model NO.: HS51
• Origin: China
• HS Code: 9030339000

Product Description

DESCRIPTION:    
                                                                        
For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.


FEATURES:    
                                                                           
Open loop using the Hall ASIC effect 
Original side and side isolation
Low power consumption
Wide range
No insertion loss
Raw materials recognized according to UL 94-V0


APPLICATIONS :   
                                                                        
Motor controller
Uninterruptible Power supplies (UPS)
Static converters for DC motor drives
Switched Mode Power Supplies (SMPS)
Power supplies for welding applications

 

Product model
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS51-  80A-P	80	±80
HS51-200A-P	200	±200
HS51-250A-P	250	±250

MODEL LISTS :

HS51-80A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	80	-
Primary current measurement range	IPM	A	-80	-	80
Supply voltage	VC	V	4.75	5	525
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.47	2.5	2.53	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	25	-
Current consumption	IC	mA	-	13.5	17	@VC=5V
Load resistance	RL	kΩ	2	-	-	@VOUT to GND
Load capacitance	C2	nF	4.7	-	47
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-2	±0.7	2
Temperature Drift of Gain Error	TCG	%/ºC	-0.4	±0.025	0.4	@TA -40ºC~125ºC
Zero point error	VOE	mV	-13	±5	13	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.48	-	0.48	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-13	±9	13
Nonlinear error	L	% of IPN	-1	±0.5	1	exclude zero VOE
Response time	tr	µs	-	15	20
Bandwidth (-3dB)	BW	kHz	20	-	-	@-3dB
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	20	30	@TA=25ºC;0Hz<f<1MHz
General Data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-40….+125
Weight	m	g	7.5

HS51-200A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	200	-
Primary current measurement range	IPM	A	-200	-	200
Supply voltage	VC	V	4.75	5	525
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.47	2.5	2.53	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A	-	10	-
Current consumption	IC	mA	-	13.5	17
Load resistance	RL	kΩ	2	-	-	@VOUT to GND
Load capacitance	C2	nF	4.7	-	47
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-2	±0.7	2
Temperature Drift of Gain Error	TCG	%/ºC	-0.4	±0.025	0.4	@TA -40ºC~125ºC
Zero point error	VOE	mV	-13	±5	13	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.12	-	0.12	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-13	±9	13
Nonlinear error	L	% of IPN	-1	±0.5	1	exclude zero VOE
Response time	tr	µs	-	15	20
Bandwidth ( -3dB)	BW	kHz	20	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	20	30	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-40….+125
Weight	m	g	7.5

HS51-250A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	250	-
Primary current measurement range	IPN	A	-250	-	250
Supply voltage	VC	V	4.75	5	525
The output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.47	2.5	2.53	@VC=5 & IP=0A
Theoretical gain	Gth	mV/A	-	8	-
Current consumption	IC	mA	-	13.5	17
Load resistance	RL	kΩ	2	-	-	@VOUT to GND
Load capacitance	C2	nF	4.7	-	47
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-2	±0.7	2
Temperature Drift of Gain Error	TCG	%/ºC	-0.4	±0.025	0.4	@TA -40ºC~125ºC
Zero point error	VOE	mV	-13	±5	13	@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.12	-	0.12	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-13	±9	13
Nonlinear error	L	% of IPN	-1	±0.5	1	exclude zero VOE
Response time	tr	µs	-	15	20
Bandwidth ( -3dB)	BW	kHz	20	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	20	30	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40….+125
Storage ambient temperature	TS	ºC	-40….+125
Weight	m	g	7.5

Note:

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc;
2. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise it will cause the core and chip to overheat;
3. Incorrect wiring may damage the sensor;

Insulation data:
 

Parameter	Symbol	Unit	Value	Comment
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	2
Impulse withstand voltage 1.2/50uS	UW	KV	-
Shell material	-	-	UL94-V0	PBT+GF30
Relative tracking index	CTI	V	-
Creepage distance	dCP	mm	-
Electrical clearance	dCI	mm	-

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	7
Continuous output current	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	KV	2