HS55-Ap Series Current Sensor Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Customized: Customized
• Trademark: TRANSFAR
• Model NO.: HS55
• Origin: China
• HS Code: 9030339000

Product Description

DESCRIPTION:     
                                                                                                                                                 
For the electronic measurement of currents : DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.

FEATURES:                  
                                                                                                                                         
Open loop using the Hall ASIC effect 
alvanic separation between the primary circuit and the secondary circuit
Low power consumption
Wide range
No insertion loss
Raw materials recognized according to UL 94-V0


APPLICATIONS:  
                                                                                                                                                  
  Motor controller
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives
  Switched Mode Power Supply (SMPS)
  Power supplies for welding applications 
 

Product MODEL
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS55-200 AP	200	±200
HS55-300 AP	300	±300
HS55-400 AP	400	±400
HS55-500 AP	500	±500
HS55-600 AP	600	±600
HS55-800 AP	800	±800
HS55-900 AP	900	±900

MODEL LISTS:

HS55-200A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	200	-
Primary current measurement range	IPM	A	-200	-	200
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+GthxIP)			@ VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	10	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth ( -3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

HS55-300A-P SECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	300	-
Primary current measurement range	IPM	A	-300	-	300
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@ VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	6.67	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth (-3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

HS55-400AP SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Characteristcs
Primary side rated current	IPN	A	-	400	-
Primary current measurement range	IPM	A	-400	-	400
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	5	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth (-3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

HS55-500AP SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	500	-
Primary current measurement range	IPM	A	-500	-	500
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	4	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth ( -3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

 

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	600	-
Primary current measurement range	IPM	A	-600	-	600
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	3.33	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth ( -3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

HS55-600AP SEPCIFICATION


HS55-800AP SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	800	-
Primary current measurement range	IPM	A	-800	-	800
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	2.5	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth ( -3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

HS55-900AP SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Parameters
Primary side rated current	IPN	A	-	900	-
Primary current measurement range	IPM	A	-900	-	900
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/5) x (2.5+Gth x IP)			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	2.22	-
Current consumption	IC	mA	-	12	20	@VC=5V
Load resistance	RL	kΩ	10	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1	-	1
Temperature drift of gain error	TCG	%/ºC	-0.05	±0.025	±0.05	@TA -40ºC~125ºC
Zero point error	IOE	A	-1.2	±0.5	1.2	@VC=5V &IP=0A
Temperature drift of zero error	TCIOE	mA/ºC	-8	±2	8	@TA -40ºC~125ºC
Magnetic offset current	IOM	A	-1.4	±0.8	1.4
Nonlinear error	L	% of IPN	-1	-	1	exclude zero VOE
Response time	tr	µs	-	1.5	3
Bandwidth ( -3dB)	BW	kHz	30	-	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 1MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-55~+150
Weight	m	g	21

Note :
 

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise it will cause the core and chip to overheat;

 

1. Incorrect wiring may damage the sensor ;

Insulation data:
 

Parameter	Symbol	Unit	Value	Comment
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	1.5
Impulse withstand voltage 1.2/50uS	UW	KV	2
Shell material	-	-	UL94-V0	PA66-GF25
Relative tracking index	CTI	V	-
Creepage distance	dCP	mm	>1.7
Electrical clearance	dCI	mm	>2.55

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	7
Continuous output current	Iout	mA	±10
Electrostatic discharge - contact discharge	VESD	KV	2