• Hb3t-4000A-E4 Series Current Sensor/Transducer
  • Hb3t-4000A-E4 Series Current Sensor/Transducer

Hb3t-4000A-E4 Series Current Sensor/Transducer

Type: Hall Type
Output Signal Type: Analog Output
Production Process: Integration
Material: Plastic
Accuracy Grade: 0.1G
Application: Switching Power Supply
Samples:
US$ 30/Piece 1 Piece(Min.Order)
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Basic Info.

Model NO.
HB3T
Customized
Customized
Transport Package
Carton
Specification
38.5*22*24.6cm
Trademark
TRANSFAR
Origin
China
HS Code
9030339000
Production Capacity
100000 Pieces Per Year

Product Description

HB3T-4000A-E4 SERIES CURRENT SENSOR/TRANSDUCER
DESCRIPTION:

For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

FEATURES:

Closed loop using the Hall effect
   The primary side and the secondary side are isolated
  Low power consumption
  Wide range
   Raw materials recognized according to UL 94-V0
 
APPLICATIONS:

  Inverter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives  
  Switched Mode Power Supplies (SMPS)
  Power supplies for welding applications
  Battery management



 
MODEL LIST:
Model Rated input current IPN (A) Measuring range IPM (A)
HB3T-4000A-E4 4000 ±4000
 

HB3T-4000A-E4 SEPCIFINATION
Parameter
Symbol
Unit
Min.
Typ.
Max.
Remarks
Electrical Data
Primary rated current IPN A   4000    
Primary current measure range IPM A -4000   4000  
Supply voltage VC V ±12   ±15  
Output voltage VOUT V   4   @ ± IPN, RL = 10 k, TA = 25°C
Current consumption IC mA -25   25  
Overload capacity ICC A rms   5* IPN    
Insulation resistance RIS 1000     @ 500 VDC
Internal impedance ROUT Ω   100    
Load Resistor RL 10      
Performance Data
Linearity εL %of IPN -1   1  
Precision X % -1   1 @ IPN, TA = 25°C (remove zero offset voltage)
Zero offset voltage VOE mV -10   10 @TA = 25°C
Zero offset voltage VOM mV -10   10 @ IP= 0;1 time the rated current impact
Zero offset temperature drift TCVOE mV/ºC -0.24   0.24  
Output offset temperature drift TCVOUT ppm/ºC     500 @% of reading
Response time tr µS     10 @ 90% of IPN step response
Current follows di/dt di/dt A/µS 50      
Bandwidth BW kHz     30 @-3dB
General Data
Ambient operating temperature TA ºC -40….+85  
Ambient storage temperature TS ºC -40….+105  
Mass m g  600  
 
Notice:
(1) Under the power supply condition of ±12V≤VC≤±15V, the measurement range of the sensor will be reduced;

(2) If the customer uses a load resistance of 1 KΩ, the current to be measured needs to be limited to the rated current. If the full-scale current is to be measured, the load resistance should be at least 10 KΩ.

(3) Linearity data does not include zero offset.
(4) It is recommended that the product flow window be installed and used in the middle of the copper row


Insulation data :       
Parameter Symbol Unit Value Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min UD KV 5  
Impulse withstand voltage 1.2/50uS UW KV 12  
Shell material - - UL94-V0 PET
Relative tracking index CTI PLC 3  
Creepage distance dCP mm 43.1  
Electrical clearance dCI mm 23.5  

Maximum limit :
Parameter Symbol Unit Value
Supply voltage VC V ±18
Output current (output shorted to ground) Iout mA -
Electrostatic discharge-contact discharge VESD V -

Hb3t-4000A-E4 Series Current Sensor/Transducer

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Gold Member Since 2024

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Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
47686000 RMB
Plant Area
>2000 square meters