HS20-a-C Current Transducer/Sensor

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Accuracy Grade: 0.1G
• Application: Switching Power Supply
• Model NO.: HS19
• Customized: Customized
• Transport Package: Carton
• Specification: 38.5*22*24.6cm
• Trademark: TRANSFAR
• Origin: China
• HS Code: 9030339000
• Production Capacity: 100000 Pieces Per Year

Product Description

HS20-A-C Current Transducer/Sensor

DESCRIPTION:
For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

FEATURES:

  Closed loop using the Hall effect
   The primary side and the secondary side are isolated
  Low power consumption
  Wide range
  No insertion loss
  Raw materials recognized according to UL 94-V0


APPLICATIONS:

  Inverter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives  
  Switched Mode Power Supplies (SMPS)
  Power supplies for welding applications
  Battery management
 

MODEL LIST:

Product model
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS20-  25A-C	25	0~   ± 50
HS20-  50A-C	50	0~ ± 100
HS20-100A-C	100	0~ ± 200
HS20-200A-C	200	0 ~ ± 400
HS20-300A-C	300	0 ~ ± 600

HS20-25A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	25
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2000	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~500
Performance Data
Linearity ^(3)(0…±IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP= 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-50A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	50
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2000	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~245
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-100A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	50
Overcurrent capability (1ms)	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~203
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA = 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-200A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	100
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~75
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA = 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

HS20-300A-C SPECIFICATION

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ^(1)	VC	V	±15
Current consumption	IC	mA	10+ output current
Output current ISN	ISN	mA	100
Overcurrent capability (1ms )	IPC	At	-
Insulation resistance	RIS	MΩ	> 2 0 00	@500VDC
Internal impedance	RS	Ω	-	approximation
Load Resistor ^(2)	RM	Ω	0~60
Performance Data
Linearity ^(3)(0…± IPN )	εL	%of IPN	<±0.2%	@TA = 25°C
Precision	X	%	<±0.5%	@ IPN , TA= 25°C
				( remove zero offset current )
Zero offset current	IOE	mA	<±0.2	@ IP= 0 , TA=25°C
Magnetic offset current	IOM	mA	<±0.2	@ IP = 0;
				1 times the rated current impact
Zero offset temperature drift	IOT	mA	<±0.5	@ IP =0 , @ -40 ~ +85 °C
Response time	tr	µS	<1	@ 90% of IPN step response
Current follows di /dt	di/dt	A/µS	>100
Bandwidth ^(4)	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	TA	ºC	-40….+85
Storage ambient temperature	TS	ºC	-40….+100
Weight	m	g	60	approximation

Notice:
(1) Under the power supply condition of ±12V≤VC≤±15V, the measurement range of the sensor will be reduced;

(2) If the customer uses the rated load resistance, the current to be measured needs to be limited to the rated current. If the full-scale current is to be measured, the load resistance should be smaller than the rated resistance .

(3) Linearity data does not include zero offset.


Insulation data:                       
 

Parameter	Symbol	Unit	Value	Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	3
Impulse withstand voltage 1.2/50uS	UW	KV	6
Shell material	-	-	UL94-V0	PPO
Relative tracking index	CTI	PLC	275
Creepage distance	dCP	mm	7
Electrical clearance	dCI	mm	6

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	±18
Output current (output shorted to ground)	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	V	-