• HS11c-Ap Series Current Sensor/Transducer
  • HS11c-Ap Series Current Sensor/Transducer
  • HS11c-Ap Series Current Sensor/Transducer
  • HS11c-Ap Series Current Sensor/Transducer
  • HS11c-Ap Series Current Sensor/Transducer
  • HS11c-Ap Series Current Sensor/Transducer

HS11c-Ap Series Current Sensor/Transducer

Type: Hall Type
Output Signal Type: Analog Output
Production Process: Integration
Material: Plastic
Accuracy Grade: 0.1G
Application: Switching Power Supply
Samples:
US$ 8/Piece 1 Piece(Min.Order)
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Gold Member Since 2024

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Manufacturer/Factory, Trading Company, Group Corporation

Basic Info.

Model NO.
HS11
Customized
Customized
Transport Package
Carton
Specification
38.5*22*24.6cm
Trademark
TRANSFAR
Origin
China
HS Code
9030339000
Production Capacity
100000 Pieces Per Year

Product Description


HS11C-AP SERIES CURRENT SENSOR/TRANSDUCERHS11c-Ap Series Current Sensor/Transducer

DESCRIPTION:

For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.

 
 
FEATURES:
  Easy to install
  No insertion loss
  Strong anti-interference ability
  Compact size

APPLICATIONS:

  AC frequency converter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives
  Switched Mode Power Supplies (SMPS)
  Electric Vehicles
  Communication power supplies
 

MODEL LIST:

 
Product MODEL
Model Rated input current IPN (A) Measuring range IPM (A)
HS11C-  50A-P   50   ±50
HS11C-100A-P 100 ±100
HS11C-150A-P 150 ±150
HS11C-200A-P 200 ±200
HS11C-300A-P 300 ±300
HS11C-400A-P 400 ±400
HS11C-500A-P 500 ±500
HS11C-600A-P 600 ±600
HS11C-700A-P 700 ±700
HS11C-800A-P 800 ±800
HS11C-900A-P 900 ±900





HS11C-50A-P SPECIFICATION
Parameter Symbol Unit Min Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -50   50  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   40    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows d i /d t di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-100A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -100   100  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   20    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-150A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -150   150  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   13.333    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-200A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -200   200  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   10    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-300A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -300   300  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   6.666    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C- 400A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -400   400  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   5    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-500A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -500   500  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   4    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-600A-P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -600   600  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   3.333    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-700A-P SPECIFICATION
Parameter Symbol      Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -700   700  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   2.857    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-800A - P SPECIFICATION
Parameter Symbol Unit    Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -800   800  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   2.5    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  



HS11C-900A - P SPECIFICATION
Parameter Symbol   Unit Min  Typ Max Comment
Electrical  Data
Primary current measurement range IPN A -900   900  
Supply voltage VC V 4.5 5.0 5.5  
Output voltage VOUT V VOUT=1/2Vc±2V @ VC
Zero output voltage VQOV V   1/2Vc   @IP=0A
Theoretical gain Gth mV/A   2.222    
Current consumption IC mA   7 10  
Load resistance RL 4.7 - unlimited @VOUT to GND
Load capacitance C2 nF - 1 10 @VOUT to GND
Power filter capacitor C1 µF - - -  
Performance Data
Gain error G % -1   1 @TA=25
Temperature drift of gain error TCG %/ºC -0.035   0.035 @TA -40ºC~125ºC
Zero point error VOE mV   ±15   @IP=0A
Temperature drift of zero error TCVOE mV/ºC -0.08   0.08 @TA -40ºC~125ºC
Magnetic offset voltage VOM mV - 5 -  
Nonlinear error L % of IPN -1   1 @TA=25,exclude zero VOE
Response time tr µs   6 8  
Bandwidth ( -3dB) BW kHz   50    
Current follows di /dt di/dt A/µS 50      
Phase shift degree   -    
Output noise Vno pp mV   -    
General Data
Ambient operating temperature TA ºC -40….+125  
Ambient storage temperature TS ºC -55….+125  
Mass m g approx 22  


Note :
  1. The output voltage Uout , the offset voltage UQOV , and the sensitivity Gth are completely proportional to the power supply Vc;
 
  1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;
 
  1. Incorrect wiring may damage the sensor ;

Insulation data:                       
 
Parameter Symbol   Unit Value Comment
AC isolation withstand voltage test RMS @ 50Hz, 1 Min UD KV 3  
Impulse withstand voltage 1.2/50uS UW KV -  
Shell material - - UL94-V0 PBT+30%GF
Relative tracking index CTI - -  
Creepage distance dCP mm -  
electrical clearance dCI mm -  


Maximum limit:
 
Parameter Symbol   Unit Value
Supply voltage VC V 6
Output current (output shorted to ground) Iout mA 10
Electrostatic discharge - contact discharge VESD V 4000

 

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Manufacturer/Factory, Trading Company, Group Corporation
Registered Capital
47686000 RMB
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