HS49-AP Series Current Sensor Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: Integration
• Material: Plastic
• Customized: Customized
• Trademark: TRANSFAR
• Model NO.: HS49
• Origin: China
• HS Code: 9030339000

Product Description

DESCRIPTION :

The primary and secondary sides of this series of sensors are insulated, used for DC, AC and pulse current measurement.
 

 

FEATURES:

 Open loop using the Hall ASIC effect 
 The primary side and the secondary side are isolated
 Low power consumption
 Wide range
 No insertion loss
 Raw materials recognized according to UL 94-V0


APPLICATIONS:

 Motor Controller
 Uninterruptible Power Supplies (UPS)
 Static converters for DC motor drives
 Switched Mode Power Supplies (SMPS)
 Power supplies for welding applications

 MODEL LIST :

 

Product model
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS49-200A-P	200	±300
HS49-400A-P	400	±600
HS49-600A-P	600	±900
HS49-800A-P	800	±1200

HS49-200A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	200	-
Primary current measurement range	IPM	A	-300	-	300
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/2)±(1.25 x IP/IPN)			@VC=5V
Reference output voltage	Vref	V	VC/2			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	6.25	-
Current consumption	IC	mA	-	19	25	@VC=5V
Load Resistance	RL	kΩ	2	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1.5	-	1.5
Temperature drift of gain error	TCG	PPM/K	-420	-	420	@TA -40ºC~+125ºC
Zero offset voltage	VOE	mV	-	±20		@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.1	-	0.1	@TA -40ºC~+125ºC
Magnetic offset voltage	VOM	mV	-	±10	-	@IPN=0A,load 3 times of IPN
Nonlinear error	L	% of IPN	-0.5	-	0.5	exclude zero VOE
Response time	tr	µs	-	-	7	90% of IPN
Bandwidth ( -3dB)	BW	kHz	-	50	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 20MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-40~+125
Weight	m	g	60

HS49-400A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	400	-
Primary current measurement range	IPM	A	-600	-	600
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/2)±(1.25 x IP/IPN)			@ VC=5V
Reference output voltage	Vref	V	VC/2			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	3.125	-
Current consumption	IC	mA	-	19	25
Load Resistance	RL	kΩ	2	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1.5	-	1.5
Temperature drift of gain error	TCG	PPM/K	-420	-	420	@TA -40ºC~+125ºC
Zero offset voltage	VOE	mV	-	±20		@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.1	-	0.1	@TA -40ºC~+125ºC
Magnetic offset voltage	VOM	mV	-	±10	-	@IPN=0A,load 3 times of IPN
Nonlinear error	L	% of IPN	-0.5	-	0.5	exclude zero VOE
Response time	tr	µs	-	-	7	90% of IPN
Bandwidth ( -3dB)	BW	kHz	-	50	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 20MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-40~+125
Weight	m	g	60

HS49-600A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	600	-
Primary current measurement range	IPM	A	-900	-	900
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/2)±(1.25 x IP/IPN)			@ VC=5V
Reference output voltage	Vref	V	VC/2			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	2.083	-
Current consumption	IC	mA	-	19	25
Load Resistance	RL	kΩ	2	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1.5	-	1.5
Temperature drift of gain error	TCG	PPM/K	-420	-	420	@TA -40ºC~+125ºC
Zero offset voltage	VOE	mV	-	±20		@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.1	-	0.1	@TA -40ºC~+125ºC
Magnetic offset voltage	VOM	mV	-	±10	-	@IPN=0A,load 3 times of IPN
Nonlinear error	L	% of IPN	-0.5	-	0.5	exclude zero VOE
Response time	tr	µs	-	-	7	90% of IPN
Bandwidth ( -3dB)	BW	kHz	-	50	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 20MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-40~+125
Weight	m	g	60

HS49-800A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical Data
Primary side rated current	IPN	A	-	800	-
Primary current measurement range	IPM	A	-1200	-	1200
Supply voltage	VC	V	4.75	5.0	5.25
Output voltage	VOUT	V	VOUT=(VC/2)±(1.25 x IP/IPN)			@VC=5V
Reference output voltage	Vref	V	VC/2			@VC=5V
Zero output voltage	VQOV	V	2.475	2.5	2.525	@VC=5V & IP=0A
Theoretical gain	Gth	mV/A	-	1.562	-
Current consumption	IC	mA	-	19	25
Load Resistance	RL	kΩ	2	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	4.7	-
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1.5	-	1.5
Temperature drift of gain error	TCG	PPM/K	-420	-	420	@TA -40ºC~+125ºC
Zero offset voltage	VOE	mV	-	±20		@VC=5V &IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.1	-	0.1	@TA -40ºC~+125ºC
Magnetic offset voltage	VOM	mV	-	±10	-	@IPN=0A,load 3 times of IPN
Nonlinear error	L	% of IPN	-0.5	-	0.5	exclude zero VOE
Response time	tr	µs	-	-	7	90% of IPN
Bandwidth ( -3dB)	BW	kHz	-	50	-
Phase shift	∅	degree	-	-	-
Output noise	Vno pp	mV	-	-	40	@DC to 20MHZ
General Data
Working ambient temperature	TA	ºC	-40~+125
Storage ambient temperature	TS	ºC	-40~+125
Weight	m	g	60

Note :
 

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc ;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;

 

1. Incorrect wiring may damage the sensor ;

Insulation data :
 

Parameter	Symbol	Unit	Value	Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min	UD	KV	2.5
Impulse withstand voltage 1.2/50uS	UW	KV	4
Shell material	-	-	UL94-V0	PBT 30 GF
Relative tracking index	CTI	V	220
Creepage distance	dCP	mm	>4
electrical clearance	dCI	mm	>4

Maximum limit :
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	7
Continuous output current	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	KV	1